? 2010 fairchild semiconductor corporation nds9948 rev b1 (w) nds9948 dual 60v p-channel powertrench ? ?? ? mosfet general description this p-channel mosfet is a rugged gate version of fairchild semiconductor?s advanced powertrench process. it has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5v ? 20v). applications ? power management ? load switch ? battery protection features ? ?2.3 a, ?60 v r ds(on) = 250 m ? @ v gs = ?10 v r ds(on) = 500 m ? @ v gs = ?4.5 v ? low gate charge (9nc typical) ? fast switching speed ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability s d s s so-8 d d d g d2 d2 d1 d1 s2 g2 s1 g1 pin 1 so-8 4 3 2 1 5 6 7 8 q1 q2 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?60 v v gss gate-source voltage 20 v i d drain current ? continuous (note 1a) ?2.3 a ? pulsed ?10 power dissipation for dual operation 2 power dissipation for single operation (note 1a) 1.6 (note 1b) 1.0 p d (note 1c) 0.9 w t j , t stg operating and storage junction temperature range ?55 to +175 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w (note 1c) 135 c/w r jc thermal resistance, junction-to-case (note 1) 40 c/w package marking and ordering information device marking device reel size tape width quantity nds9948 nds9948 13?? 12mm 2500 units nds9948 january 2 010
nds9948 rev b 1 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) w dss drain-source avalanche energy single pulse, v dd =?54 v 1 5 mj i ar drain-source avalanche current off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?60 v ?bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a, referenced to25 c ?52 mv/ c i dss zero gate voltage drain current v ds = ?40 v, v gs = 0 v v ds = ?40 v,v gs = 0 v t j =?55 c ?2 ?25 a i gssf gate?body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?1 ?1.5 ?3 v ?v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a, referenced to25 c 4 mv/ c r ds(on) static drain?source on?resistance v gs = ?10 v, i d = ?2.3 a v gs = ?4.5 v, i d = ?1.6 a v gs = ?10 v,i d = ?2.3a, t j =125 c 138 175 225 250 500 433 m ? i d(on) on?state drain current v gs = ?10 v, v ds = ?5 v ?10 a g fs forward transconductance v ds = ?10 v, i d = ?2.3 a 5 s dynamic characteristics c iss input capacitance 394 pf c oss output capacitance 53 pf c rss reverse transfer capacitance v ds = ?30 v, v gs = 0 v, f = 1.0 mhz 23 pf switching characteristics (note 2) t d(on) turn?on delay time 6 12 ns t r turn?on rise time 9 18 ns t d(off) turn?off delay time 16 29 ns t f turn?off fall time v dd = ?30 v, i d = ?1 a, v gs = ?10 v, r gen = 6 ? 3 6 ns q g total gate charge 9 13 nc q gs gate?source charge 1.4 nc q gd gate?drain charge v ds = ?30 v, i d = ?2.3 a, v gs = ?10 v 1.7 nc nds9948 ?10 a
nds9948 rev b 1 (w) electrical characteristics (cont.) t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?1.7 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?1.7 a (note 2) ?0.8 ?1.2 v t rr reverse recovery time v gs = 0 v, i f = ?2.3a, di f /dt = 100a/ s 25 ns notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. ` a) 78c/w when mounted on a 0.5in 2 pad of 2 oz copper b) 125c/w when mounted on a 0.02 in 2 pad of 2 oz copper c) 135c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% nds9948
nds9948 rev b 1 (w) typical characteristics 0 2 4 6 8 10 0123456 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -10v -3.0v -3.5v -4.0v -4.5v -6.0v 0.8 1 1.2 1.4 1.6 1.8 0246810 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs =-3.5v -4.0v -6.0v -10v -4.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistanc e i d = -2.3a v gs = -10v 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 24681 0 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -1a t a = 125 o c t a = 25 o c figure 3. on-resistance variation withtemperature. figure 4. on-resistance variation with gate-to-source voltage. 0 1 2 3 4 5 6 11.522.533.54 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs =0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. nds9948
nds9948 rev b 1 (w) typical characteristics 0 2 4 6 8 10 0246810 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -2.3 a v ds = -20v -30v -40v 0 100 200 300 400 500 600 0 102030405060 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a ) dc 1s 100ms 100 r ds(on) limit v gs = -10v single pulse r ja = 135 o c/w t a = 25 o c 10ms 1ms 10s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 135c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transien t thermal resistance r ja (t) = r(t) * r ja r ja = 135 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. nds9948
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